Author: D. Paul

Abstract

Silicon nanowire transistors are already being investigated for More Moore scaling of conventional transistors to the technology nodes below 10 nm. The technology when cooled can also form quantum dots that can be used for quantum information processing architectures. Here we will present Si nanowires with 8 nm diameter with wrap around gates that enable quantum dots to be formed in the nanowire. Low temperature measurements demonstrate over 500 single electron charging states in the quantum dots with clear Coulomb diamonds. The physics of the transport will be discussed as well as a review of the potential applications for such devices that can be controlled with single electron tunnelling.