Publications

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Journal Article
Gammaitoni L, Chiuchiú D., Madami M, Carlotti G.  2015.  Towards zero-power ICT. Nanotechnology. 26:222001.
Gammaitoni L, Chiuchiú D., Madami M, Carlotti G.  2015.  Towards zero-power ICT. Nanotechnology. 26:222001.
Cecchi S., Gatti E., Chrastina D., Frigerio J., E. Gubler üller, Paul D.J, Guzzi M., Isella G..  2014.  Thin SiGe virtual substrates for Ge heterostructures integration on silicon. Journal of Applied Physics. 115(9):093502.
Cecchi S., Gatti E., Chrastina D., Frigerio J., E. Gubler üller, Paul D.J, Guzzi M., Isella G..  2014.  Thin SiGe virtual substrates for Ge heterostructures integration on silicon. Journal of Applied Physics. 115(9):093502.
M. Gonzalez-Zalba F, Ciccarelli C, Zarbo LP, Irvine AC, Campion RC, Gallagher BL, Jungwirth T, Ferguson AJ, Wunderlich J.  2015.  Reconfigurable Boolean Logic Using Magnetic Single-Electron Transistors. PLoS ONE. 10:e0125142.
M. Gonzalez-Zalba F, Ciccarelli C, Zarbo LP, Irvine AC, Campion RC, Gallagher BL, Jungwirth T, Ferguson AJ, Wunderlich J.  2015.  Reconfigurable Boolean Logic Using Magnetic Single-Electron Transistors. PLoS ONE. 10:e0125142.
Lavieville R, Triozon F, Barraud S, Corna A, Jehl X, Sanquer M, Li J, Abisset A, Duchemin I, Niquet Y-M.  2015.  Quantum Dot Made in Metal Oxide Silicon-Nanowire Field Effect Transistor Working at Room Temperature.. Nano Letters. 15:2958-2964.
Samarelli A., L. Llin F, Cecchi S., Frigerio J., Chrastina D., Isella G., E. Gubler üller, Etzelstorfer T., Stangl J., Zhang Y. et al..  2014.  Prospects for SiGe thermoelectric generators. Solid-State Electronics. 98:70-74.
Samarelli A., L. Llin F, Cecchi S., Frigerio J., Chrastina D., Isella G., E. Gubler üller, Etzelstorfer T., Stangl J., Zhang Y. et al..  2014.  Prospects for SiGe thermoelectric generators. Solid-State Electronics. 98:70-74.
Samarelli A., L. Llin F, Cecchi S., Chrastina D., Isella G., Etzelstorfer T., Stangl J., E. Gubler M, Weaver J.MR, Dobson P. et al..  2014.  Multilayered Ge/SiGe Material in Microfabricated Thermoelectric Modules. Journal of Electronic Materials. 43(10):3838-3843.
Samarelli A., L. Llin F, Cecchi S., Chrastina D., Isella G., Etzelstorfer T., Stangl J., E. Gubler M, Weaver J.MR, Dobson P. et al..  2014.  Multilayered Ge/SiGe Material in Microfabricated Thermoelectric Modules. Journal of Electronic Materials. 43(10):3838-3843.
Samarelli A., L. Llin F, Cecchi S., Frigerio J., Etzelstorfer T., E. Gubler M, Stangl J., Chrastina D., Isella G., Paul D..  2014.  (Invited) The Thermoelectric Properties of Ge/SiGe Based Superlattices: from Materials to Energy Harvesting Modules. ECS Transactions. 64(6):929-937.
Samarelli A., L. Llin F, Cecchi S., Frigerio J., Etzelstorfer T., E. Gubler M, Stangl J., Chrastina D., Isella G., Paul D..  2014.  (Invited) The Thermoelectric Properties of Ge/SiGe Based Superlattices: from Materials to Energy Harvesting Modules. ECS Transactions. 64(6):929-937.
Betz A. C., Barraud S., Wilmart Q., B. cais P\c, Jehl X., Sanquer M., Gonzalez-Zalba M. F..  2014.  High-frequency characterization of thermionic charge transport in silicon-on-insulator nanowire transistors. Applied Physics Letters. 104:043106.
Madami M, Chiuchiù D, Carlotti G, Gammaitoni L.  2015.  Fundamental energy limits in the physics of nanomagnetic binary switches. Nano Energy. 15:313–320.
Madami M, Chiuchiù D, Carlotti G, Gammaitoni L.  2015.  Fundamental energy limits in the physics of nanomagnetic binary switches. Nano Energy. 15:313–320.
Gonzalez-Zalba M.F, Saraiva A, Calderón MJ, Heiss D, Koiller B, Ferguson AJ.  2014.  An Exchange-Coupled Donor Molecule in Silicon. Nano Letters. 14:5672-5676.
Clapera P., Ray S., Jehl X., Sanquer M., Valentian A., Barraud S..  2015.  Design and Cryogenic Operation of a Hybrid Quantum-CMOS Circuit. Phys. Rev. Applied. 4:044009.
Jehl X, Voisin B, Roche B, Dupont-Ferrier E, De Franceschi S, Sanquer M, Cobian M, Niquet Y-M, Sklénard B, Cueto O et al..  2015.  The coupled atom transistor. Journal of Physics: Condensed Matter. 27:154206.
Jehl X, Voisin B, Roche B, Dupont-Ferrier E, De Franceschi S, Sanquer M, Cobian M, Niquet Y-M, Sklénard B, Cueto O et al..  2015.  The coupled atom transistor. Journal of Physics: Condensed Matter. 27:154206.
Voisin B., Cobian M., Jehl X., Vinet M., Niquet Y.-M., Delerue C., de Franceschi S., Sanquer M..  2014.  Control of the ionization state of three single donor atoms in silicon. Phys. Rev. B. 89:161404.
Urdampilleta M, Chatterjee A, Lo CChi, Kobayashi T, Mansir J, Barraud S, Betz AC, Rogge S, M. Gonzalez-Zalba F, Morton JJL.  2015.  Charge Dynamics and Spin Blockade in a Hybrid Double Quantum Dot in Silicon. Phys. Rev. X. 5:031024.

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