Publications

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Journal Article
Boudjadar A., David A., Kim J.H, Larsen K.G, Mikucionis M., Nyman U., Skou A..  2016.  Statistical and exact schedulability analysis of hierarchical scheduling systems. . Science of Computer Programming. 127:103-130.
Boudjadar A., David A., Kim J.H., Larsen K.G, Mikucionis M., Nyman U., Skou A..  2015.  A reconfigurable framework for compositional schedulability and power analysis of hierarchical scheduling systems with frequency scaling. Science of Computer Programming. 113:236-260.
Lavieville R, Triozon F, Barraud S, Corna A, Jehl X, Sanquer M, Li J, Abisset A, Duchemin I, Niquet Y-M.  2015.  Quantum Dot Made in Metal Oxide Silicon-Nanowire Field Effect Transistor Working at Room Temperature.. Nano Letters. 15:2958-2964.
Samarelli A., L. Llin F, Cecchi S., Frigerio J., Chrastina D., Isella G., E. Gubler üller, Etzelstorfer T., Stangl J., Zhang Y. et al..  2014.  Prospects for SiGe thermoelectric generators. Solid-State Electronics. 98:70-74.
Samarelli A., L. Llin F, Cecchi S., Chrastina D., Isella G., Etzelstorfer T., Stangl J., E. Gubler M, Weaver J.MR, Dobson P. et al..  2014.  Multilayered Ge/SiGe Material in Microfabricated Thermoelectric Modules. Journal of Electronic Materials. 43(10):3838-3843.
Voisin B, Nguyen V-H, Renard J, Jehl X, Barraud S, Triozon F, Vinet M, Duchemin I, Niquet Y-M, de Franceschi S et al..  2014.  Few-Electron Edge-State Quantum Dots in a Silicon Nanowire Field-Effect Transistor. Nano Letters. 14:2094-2098.
Voisin B, Nguyen V-H, Renard J, Jehl X, Barraud S, Triozon F, Vinet M, Duchemin I, Niquet Y-M, de Franceschi S et al..  2014.  Few-Electron Edge-State Quantum Dots in a Silicon Nanowire Field-Effect Transistor. Nano Letters. 14:2094-2098.
Jehl X, Voisin B, Roche B, Dupont-Ferrier E, De Franceschi S, Sanquer M, Cobian M, Niquet Y-M, Sklénard B, Cueto O et al..  2015.  The coupled atom transistor. Journal of Physics: Condensed Matter. 27:154206.
Jehl X, Voisin B, Roche B, Dupont-Ferrier E, De Franceschi S, Sanquer M, Cobian M, Niquet Y-M, Sklénard B, Cueto O et al..  2015.  The coupled atom transistor. Journal of Physics: Condensed Matter. 27:154206.
Voisin B., Cobian M., Jehl X., Vinet M., Niquet Y.-M., Delerue C., de Franceschi S., Sanquer M..  2014.  Control of the ionization state of three single donor atoms in silicon. Phys. Rev. B. 89:161404.
Voisin B., Cobian M., Jehl X., Vinet M., Niquet Y.-M., Delerue C., de Franceschi S., Sanquer M..  2014.  Control of the ionization state of three single donor atoms in silicon. Phys. Rev. B. 89:161404.