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Journal Article
Voisin B., Cobian M., Jehl X., Vinet M., Niquet Y.-M., Delerue C., de Franceschi S., Sanquer M..  2014.  Control of the ionization state of three single donor atoms in silicon. Phys. Rev. B. 89:161404.
Jehl X, Voisin B, Roche B, Dupont-Ferrier E, De Franceschi S, Sanquer M, Cobian M, Niquet Y-M, Sklénard B, Cueto O et al..  2015.  The coupled atom transistor. Journal of Physics: Condensed Matter. 27:154206.
Clapera P., Ray S., Jehl X., Sanquer M., Valentian A., Barraud S..  2015.  Design and Cryogenic Operation of a Hybrid Quantum-CMOS Circuit. Phys. Rev. Applied. 4:044009.
Betz A.C, Wacquez R., Vinet M., Jehl X., Saraiva A.L, Sanquer M., Ferguson A.J, Gonzalez-Zalba M.F.  2015.  Dispersively Detected Pauli Spin-Blockade in a Silicon Nanowire Field-Effect Transistor. Nano Letters. 15:4622-4627.
Orlov A.O., Fay P., Snider G.L., Jehl X., Barraud S., Sanquer M..  2015.  Dual-Port Reflectometry Technique: Charge identification in nanoscaled single-electron transistors.. Nanotechnology Magazine, IEEE. 9:24-32.
Voisin B, Nguyen V-H, Renard J, Jehl X, Barraud S, Triozon F, Vinet M, Duchemin I, Niquet Y-M, de Franceschi S et al..  2014.  Few-Electron Edge-State Quantum Dots in a Silicon Nanowire Field-Effect Transistor. Nano Letters. 14:2094-2098.
Betz A. C., Barraud S., Wilmart Q., B. cais P\c, Jehl X., Sanquer M., Gonzalez-Zalba M. F..  2014.  High-frequency characterization of thermionic charge transport in silicon-on-insulator nanowire transistors. Applied Physics Letters. 104:043106.
Lavieville R, Triozon F, Barraud S, Corna A, Jehl X, Sanquer M, Li J, Abisset A, Duchemin I, Niquet Y-M.  2015.  Quantum Dot Made in Metal Oxide Silicon-Nanowire Field Effect Transistor Working at Room Temperature.. Nano Letters. 15:2958-2964.
M. Gonzalez-Zalba F, Ciccarelli C, Zarbo LP, Irvine AC, Campion RC, Gallagher BL, Jungwirth T, Ferguson AJ, Wunderlich J.  2015.  Reconfigurable Boolean Logic Using Magnetic Single-Electron Transistors. PLoS ONE. 10:e0125142.