Publications

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Journal Article
Boudjadar A., David A., Kim J.H, Larsen K.G, Mikucionis M., Nyman U., Skou A..  2016.  Statistical and exact schedulability analysis of hierarchical scheduling systems. . Science of Computer Programming. 127:103-130.
Boudjadar A., David A., Kim J.H., Larsen K.G, Mikucionis M., Nyman U., Skou A..  2015.  A reconfigurable framework for compositional schedulability and power analysis of hierarchical scheduling systems with frequency scaling. Science of Computer Programming. 113:236-260.
Lavieville R, Triozon F, Barraud S, Corna A, Jehl X, Sanquer M, Li J, Abisset A, Duchemin I, Niquet Y-M.  2015.  Quantum Dot Made in Metal Oxide Silicon-Nanowire Field Effect Transistor Working at Room Temperature.. Nano Letters. 15:2958-2964.
Samarelli A., L. Llin F, Cecchi S., Frigerio J., Chrastina D., Isella G., E. Gubler üller, Etzelstorfer T., Stangl J., Zhang Y. et al..  2014.  Prospects for SiGe thermoelectric generators. Solid-State Electronics. 98:70-74.
Samarelli A., L. Llin F, Cecchi S., Frigerio J., Chrastina D., Isella G., E. Gubler üller, Etzelstorfer T., Stangl J., Zhang Y. et al..  2014.  Prospects for SiGe thermoelectric generators. Solid-State Electronics. 98:70-74.
Samarelli A., L. Llin F, Cecchi S., Chrastina D., Isella G., Etzelstorfer T., Stangl J., E. Gubler M, Weaver J.MR, Dobson P. et al..  2014.  Multilayered Ge/SiGe Material in Microfabricated Thermoelectric Modules. Journal of Electronic Materials. 43(10):3838-3843.
Samarelli A., L. Llin F, Cecchi S., Chrastina D., Isella G., Etzelstorfer T., Stangl J., E. Gubler M, Weaver J.MR, Dobson P. et al..  2014.  Multilayered Ge/SiGe Material in Microfabricated Thermoelectric Modules. Journal of Electronic Materials. 43(10):3838-3843.
Samarelli A., L. Llin F, Cecchi S., Frigerio J., Etzelstorfer T., E. Gubler M, Stangl J., Chrastina D., Isella G., Paul D..  2014.  (Invited) The Thermoelectric Properties of Ge/SiGe Based Superlattices: from Materials to Energy Harvesting Modules. ECS Transactions. 64(6):929-937.
Samarelli A., L. Llin F, Cecchi S., Frigerio J., Etzelstorfer T., E. Gubler M, Stangl J., Chrastina D., Isella G., Paul D..  2014.  (Invited) The Thermoelectric Properties of Ge/SiGe Based Superlattices: from Materials to Energy Harvesting Modules. ECS Transactions. 64(6):929-937.
Betz A. C., Barraud S., Wilmart Q., B. cais P\c, Jehl X., Sanquer M., Gonzalez-Zalba M. F..  2014.  High-frequency characterization of thermionic charge transport in silicon-on-insulator nanowire transistors. Applied Physics Letters. 104:043106.
Voisin B, Nguyen V-H, Renard J, Jehl X, Barraud S, Triozon F, Vinet M, Duchemin I, Niquet Y-M, de Franceschi S et al..  2014.  Few-Electron Edge-State Quantum Dots in a Silicon Nanowire Field-Effect Transistor. Nano Letters. 14:2094-2098.
Gonzalez-Zalba M.F, Saraiva A, Calderón MJ, Heiss D, Koiller B, Ferguson AJ.  2014.  An Exchange-Coupled Donor Molecule in Silicon. Nano Letters. 14:5672-5676.
Orlov A.O., Fay P., Snider G.L., Jehl X., Barraud S., Sanquer M..  2015.  Dual-Port Reflectometry Technique: Charge identification in nanoscaled single-electron transistors.. Nanotechnology Magazine, IEEE. 9:24-32.
Orlov A.O., Fay P., Snider G.L., Jehl X., Barraud S., Sanquer M..  2015.  Dual-Port Reflectometry Technique: Charge identification in nanoscaled single-electron transistors.. Nanotechnology Magazine, IEEE. 9:24-32.
Betz A.C, Wacquez R., Vinet M., Jehl X., Saraiva A.L, Sanquer M., Ferguson A.J, Gonzalez-Zalba M.F.  2015.  Dispersively Detected Pauli Spin-Blockade in a Silicon Nanowire Field-Effect Transistor. Nano Letters. 15:4622-4627.
Betz A.C, Wacquez R., Vinet M., Jehl X., Saraiva A.L, Sanquer M., Ferguson A.J, Gonzalez-Zalba M.F.  2015.  Dispersively Detected Pauli Spin-Blockade in a Silicon Nanowire Field-Effect Transistor. Nano Letters. 15:4622-4627.
Clapera P., Ray S., Jehl X., Sanquer M., Valentian A., Barraud S..  2015.  Design and Cryogenic Operation of a Hybrid Quantum-CMOS Circuit. Phys. Rev. Applied. 4:044009.
Jehl X, Voisin B, Roche B, Dupont-Ferrier E, De Franceschi S, Sanquer M, Cobian M, Niquet Y-M, Sklénard B, Cueto O et al..  2015.  The coupled atom transistor. Journal of Physics: Condensed Matter. 27:154206.
Jehl X, Voisin B, Roche B, Dupont-Ferrier E, De Franceschi S, Sanquer M, Cobian M, Niquet Y-M, Sklénard B, Cueto O et al..  2015.  The coupled atom transistor. Journal of Physics: Condensed Matter. 27:154206.
Voisin B., Cobian M., Jehl X., Vinet M., Niquet Y.-M., Delerue C., de Franceschi S., Sanquer M..  2014.  Control of the ionization state of three single donor atoms in silicon. Phys. Rev. B. 89:161404.

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